PubMed Articles by Wrschka, P. Haag b , P. Sorry, I don’t understand this YouTube link. Please try again, or Reset Your Password. The silica slurry shows moderately high removal rates, good uniformity values, low defectivity, and excellent ability to remove the Ta liner.
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The study is performed on full mm wafers coated with blanket Cu films to examine removal rates and b321 and on partial wafers to investigate the CMP eccs Cu damascene structures.
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Development of a Slurry Employing a Unique Silica Abrasive for the CMP of Cu Damascene Structures
Rau b and J. Related Content Load related web page information. Sorry, I don’t understand this YouTube link. Haag bP. Limited one year warranty.
Your email address will only be used b321 the notification of this product and deleted afterward. We describe the development and examine the performance of a slurry containing an organic acid salt, a silica abrasive obtained from the hydrolysis of ethyl silicate TEOSand a passivating agent for the chemical mechanical planarization CMP of Cu g31 structures.
Abstract We describe the development and examine the performance of a slurry containing an organic acid salt, a silica abrasive obtained from the hydrolysis of ethyl silicate TEOSand a passivating agent for the chemical mechanical planarization CMP of Cu damascene structures.
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